for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 2 linear & power amplifiers - smt HMC327MS8G / 327ms8ge gaas ingap hbt mmic 1/2 watt power amplifier, 3 - 4 ghz v06.1209 general description features functional diagram the HMC327MS8G(e) is a high efficiency gaas ingap heterojunction bipolar transistor (hbt) mmic power amplifi er which operates between 3 and 4 ghz. the amplifi er is packaged in a low cost, surface mo- unt 8 leaded package with an exposed base for improved rf and thermal performance. with a mini- mum of external components, the amplifi er provides 21 db of gain, +30 dbm of saturated power at 45% pae from a single +5v supply. power down capability is available to conserve current consumption when the amplifi er is not in use. high gain: 21 db saturated power: +30 dbm @ 45% pae output p1db: +27 dbm single supply: +5v power down capability low external part count compact msop package: 14.8 mm 2 electrical specifi cations, t a = +25 c, vs = 5v, vctl = 5v typical applications the HMC327MS8G(e) is ideal for: ? wireless local loop ? wimax & fixed wireless ? access points ? subscriber equipment parameter min. typ. max. units frequency range 3 - 4 ghz gain 17 21 24 db gain variation over temperature 0.025 0.035 db / c input return loss 15 db output return loss 8db output power for 1db compression (p1db) 24 27 dbm saturated output power (psat) 30 dbm output third order intercept (ip3) 36 40 dbm noise figure 5db supply current (icq) vctl* = 0v/5v 0.002 / 250 ma control current (ipd) vctl* = 5v 7 ma switching speed ton, toff 40 ns *see application circuit for proper biasing confi guration.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 3 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -25 -15 -5 5 15 25 2 2.5 3 3.5 4 4.5 5 s21 s11 s22 response (db) frequency (ghz) -15 -12 -9 -6 -3 0 2.5 3 3.5 4 4.5 +25 c +85 c -40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 2.5 3 3.5 4 4.5 +25 c +85 c -40 c return loss (db) frequency (ghz) 14 18 22 26 30 34 2.5 3 3.5 4 4.5 +25 c +85 c -40 c psat (dbm) frequency (ghz) 14 18 22 26 30 34 2.5 3 3.5 4 4.5 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 24 2.5 3 3.5 4 4.5 +25 c +85 c -40 c gain (db) frequency (ghz) HMC327MS8G / 327ms8ge v05.0509 gaas ingap hbt mmic 1/2 watt power amplifier, 3 - 4 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 4 linear & power amplifiers - smt power compression @ 3.5 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage reverse isolation vs. temperature power down isolation 18 20 22 24 26 28 22 24 26 28 30 32 4.75 5 5.25 gain p1db psat gain (db) p1db (dbm) & psat (dbm) vcc supply voltage (v) 0 2 4 6 8 10 3 3.5 4 4.5 +25 c +85 c -40 c noise figure (db) frequency (ghz) 0 8 16 24 32 40 48 -5 -1 3 7 11 15 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 14 19 24 29 34 39 44 2.5 3 3.5 4 4.5 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) -60 -50 -40 -30 -20 -10 0 2.5 3 3.5 4 4.5 +25 c +85 c -40 c isolation (db) frequency (ghz) -40 -30 -20 -10 0 2.5 3 3.5 4 4.5 isolation (db) frequency (ghz) HMC327MS8G / 327ms8ge v05.0509 gaas ingap hbt mmic 1/2 watt power amplifier, 3 - 4 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 5 outline drawing absolute maximum ratings gain, power & quiescent supply current vs. vpd @ 3.5 ghz collector bias voltage (vcc) +5.5v control voltage (vpd) +5.5v rf input power (rfin)(vs = vctl = +5v) +16 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 29 mw/c above 85 c) 1.88 w thermal resistance (junction to ground paddle) 34 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c 5 10 15 20 25 30 0 50 100 150 200 250 2.5 3 3.5 4 4.5 5 p1db psat gain icq gain (db), p1db (dbm), psat (dbm) icq (ma) vctl (v) notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. part number package body material lead finish msl rating package marking [3] HMC327MS8G low stress injection molded plastic sn/pb solder msl1 [1] h327 xxxx HMC327MS8Ge rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h327 xxxx [1] max peak refl ow temperature of 235 c [2] max peak refl ow temperature of 260 c [3] 4-digit lot number xxxx package information electrostatic sensitive device observe handling precautions HMC327MS8G / 327ms8ge v05.0509 gaas ingap hbt mmic 1/2 watt power amplifier, 3 - 4 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 6 linear & power amplifiers - smt tl1 tl2 tl3 impedance 50 ohm 50 ohm 50 ohm length 0.038 0.231 0.1 note: c3 should be located <0.020 from pin 8 (vcc) note: c2 should be located < 0.020 from l1 pin number function description interface schematic 1vpd power control pin. for proper control bias, this pin should be con- nected to 5v through a series resistor of 130 ohms. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 2, 4, 7 gnd ground: backside of package has exposed metal ground paddle that must be connected to ground thru a short path. vias under the device are required. 3rfin this pin is ac coupled and matched to 50 ohms. 5, 6 rfout rf output and bias for the output stage. the power supply for the output device needs to be supplied to these pins. 8vcc power supply voltage for the fi rst amplifi er stage. an external bypass capacitor of 330 pf is required. this capacitor should be placed as close to the device as possible. pin descriptions application circuit HMC327MS8G / 327ms8ge v05.0509 gaas ingap hbt mmic 1/2 watt power amplifier, 3 - 4 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 7 evaluation pcb the circuit board used in the application should use rf circuit design techniques. signal lines sho- uld have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 104991 [1] item description j1 - j2 pcb mount sma rf connector j3 2 mm dc header c1 - c3 330 pf capacitor, 0603 pkg. c4 1.2 pf capacitor, 0603 pkg. c5 2 pf capacitor, 0402 pkg. c6 2.2 f capacitor, tantalum l1 3 nh inductor, 0805 pkg. r1 130 ohm resistor, 0603 pkg. u1 HMC327MS8G(e) amplifi er pcb [2] 104829 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 HMC327MS8G / 327ms8ge v05.0509 gaas ingap hbt mmic 1/2 watt power amplifier, 3 - 4 ghz
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